Characterization of MOCVD-Prepared CIS Solar Cells
Seung Hoon Lee,
Gyu Hyun Lee,
Hae-Seok Lee,
Donghwan Kim and
Yoonmook Kang
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Seung Hoon Lee: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Gyu Hyun Lee: Mecaroenergy Co., Ltd., Eumseong-gun 17745, Korea
Hae-Seok Lee: Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul 02841, Korea
Donghwan Kim: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Yoonmook Kang: Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul 02841, Korea
Energies, 2021, vol. 14, issue 22, 1-7
Abstract:
Chalcopyrite Cu(In,Ga)Se 2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe 2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.
Keywords: CIGS solar cell; MOCVD; MOCVD-prepared CIGS; EBIC; buried junction (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)
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