Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio and Andrea Irace
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Alessandro Borghese: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Alessandro Di Costanzo: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Michele Riccio: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Luca Maresca: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Giovanni Breglio: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
Andrea Irace: Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy

Energies, 2021, vol. 14, issue 23, 1-12

Abstract: In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.

Keywords: GaN; HEMT; gate driver; p-GaN gate; TSEP; Schottky contact; Ohmic contact; short circuit; boost converter (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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