The Road to a Robust and Affordable SiC Power MOSFET Technology

Hema Lata Rao Maddi, Susanna Yu, Shengnan Zhu, Tianshi Liu, Limeng Shi, Minseok Kang, Diang Xing, Suvendu Nayak, Marvin H. White and Anant K. Agarwal
Additional contact information
Hema Lata Rao Maddi: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Susanna Yu: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Shengnan Zhu: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Tianshi Liu: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Limeng Shi: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Minseok Kang: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Diang Xing: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Suvendu Nayak: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
Marvin H. White: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Anant K. Agarwal: Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA

Energies, 2021, vol. 14, issue 24, 1-20

Abstract: This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.

Keywords: SiC MOSFET; threshold voltage; oxide reliability; body diode; short circuit withstand time (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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