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A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

Jongwoon Yoon, Jaeyeop Na and Kwangsoo Kim
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Jongwoon Yoon: Department of Electronic Engineering, Sogang University, Seoul 04107, Korea
Jaeyeop Na: Department of Electronic Engineering, Sogang University, Seoul 04107, Korea
Kwangsoo Kim: Department of Electronic Engineering, Sogang University, Seoul 04107, Korea

Energies, 2021, vol. 14, issue 24, 1-12

Abstract: A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa region, the reverse recovery time and reverse recovery charge of the IHP-MOSFET decreased by 62.5% and 85.7%, respectively. In addition, a high breakdown voltage (BV) and low maximum oxide electric field (E MOX ) could be achieved in the IHP-MOSFET by introducing a p-shield region (PSR) that effectively disperses the electric field in the off-state. The proposed device also exhibited 3.9 times lower gate-to-drain capacitance (C GD ) than the C-MOSFET due to the split-gate structure and grounded PSR. As a result, the IHP-MOSFET had electrically excellent static and dynamic characteristics, and the Baliga’s figure of merit (BFOM) and high frequency figure of merit (HFFOM) were increased by 37.1% and 72.3%, respectively. Finally, the switching energy loss was decreased by 59.5% compared to the C-MOSFET.

Keywords: SiC; MOSFET; heterojunction diode; p-shield region; split-gate; BFOM; HFFOM; switching energy loss; reverse recovery; gate-to-drain capacitance (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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