A GaN-HEMT Compact Model Including Dynamic R DSon Effect for Power Electronics Converters

Ke Li, Paul Leonard Evans, Christopher Mark Johnson, Arnaud Videt and Nadir Idir
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Ke Li: Centre for Advanced Low-Carbon Propulsion Systems, Coventry University, Coventry CV1 2TL, UK
Paul Leonard Evans: Power Electronics, Machines and Control Group, University of Nottingham, Nottingham NG7 2RD, UK
Christopher Mark Johnson: Power Electronics, Machines and Control Group, University of Nottingham, Nottingham NG7 2RD, UK
Arnaud Videt: Laboratoire d’Electrotechnique et d’Electronique de Puissance, Université de Lille, Centrale Lille, Junia, ULR 2697, Arts et Metiers Institute of Technology, F-59000 Lille, France
Nadir Idir: Laboratoire d’Electrotechnique et d’Electronique de Puissance, Université de Lille, Centrale Lille, Junia, ULR 2697, Arts et Metiers Institute of Technology, F-59000 Lille, France

Energies, 2021, vol. 14, issue 8, 1-17

Abstract: In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic R DSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic R DSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

Keywords: GaN-HEMT; dynamic R DSon; power electronics; compact model; simulation; switching transients; power losses (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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