Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Surya Elangovan, Edward Yi Chang and Stone Cheng
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Surya Elangovan: Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
Edward Yi Chang: Department of Material Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
Stone Cheng: Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan

Energies, 2021, vol. 14, issue 8, 1-11

Abstract: In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (V GS ) bias stress. Device transfer and transconductance, output, and gate-leakage characteristics were studied in detail, before and after each pulsed and prolonged negative V GS bias stress. We found that the gradual degradation of electrical parameters, such as threshold voltage (V TH ) shift, on-state resistance (R DS-ON ) increase, transconductance max (G m, max ) decrease, and gate leakage current (I GS-Leakage ) increase, is caused by negative V GS bias stress time evolution and magnitude of stress voltage. The significance of electron trapping effects was revealed from the V TH shift or instability and other parameter degradation under different stress voltages. The degradation mechanism behind the DC characteristics could be assigned to the formation of hole deficiency at p-GaN region and trapping process at the p-GaN/AlGaN hetero-interface, which induces a change in the electric potential distribution at the gate region. The design and application of E-mode GaN with p-GaN gate power devices still need such a reliability investigation for significant credibility.

Keywords: enhancement-mode GaN power device; p-GaN; high electron mobility transistor (HEMT); negative gate bias stress; p-GaN; electron traps (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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