Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

You-Chen Weng, Chih-Chiang Wu, Edward Yi Chang and Wei-Hua Chieng
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You-Chen Weng: Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Chih-Chiang Wu: Mechanical and Mechatronics Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
Edward Yi Chang: Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Wei-Hua Chieng: Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

Energies, 2021, vol. 14, issue 8, 1-16

Abstract: In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requires high frequency sampling at a high voltage (>600 V), we developed an innovative control method called the minimum power input control. The output of this minimum power input control can be presented in simple empirical equations allowing the optimal power transfer efficiency for 6.78 MHz resonant wireless power transfer (WPT). In order to reduce the switching loss, a gate drive design for the D-mode GaN HEMT, which is highly influential for the reliability of the resonant WPT, was also produced and described here for circuit designers.

Keywords: wireless power transfer; class-E amplifier; minimum power input control; D-mode; GaN HEMT; gate drive (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (7)

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