Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account
Paweł Górecki,
Krzysztof Górecki and
Janusz Zarębski
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Paweł Górecki: Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Krzysztof Górecki: Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Janusz Zarębski: Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Energies, 2021, vol. 14, issue 9, 1-18
Abstract:
This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device.
Keywords: IGBT; modelling; thermal phenomena; SPICE; compact electrothermal model; self-heating (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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Persistent link: https://EconPapers.repec.org/RePEc:gam:jeners:v:14:y:2021:i:9:p:2372-:d:541406
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