A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Hongyan Zhao, Jiangui Chen, Yan Li and Fei Lin
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Hongyan Zhao: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Jiangui Chen: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Yan Li: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Fei Lin: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China

Energies, 2021, vol. 14, issue 9, 1-11

Abstract: Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.

Keywords: SiC MOSFET; switching speed; turn-on loss; SRD-type drive circuit; turn-on oscillation (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2021
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