Compact Thermal Modeling of Power Semiconductor Devices with the Influence of Atmospheric Pressure

Paweł Górecki
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Paweł Górecki: Department of Marine Electronics, Gdynia Maritime University, 81-225 Gdynia, Poland

Energies, 2022, vol. 15, issue 10, 1-10

Abstract: The efficiency of the heat dissipation process generated in semiconductor devices depends on many factors, related both to the parameters of the cooling system and environmental factors. Regarding the latter factors, ambient temperature and volume in which the device operates are typically indicated as the most important. However, in the case of the operation of semiconductor devices in non-standard conditions, e.g., in stratospheric airships, the thermal parameters of the device are significantly affected by a low value of atmospheric pressure. This paper presents a compact thermal model of a semiconductor device, considering the effects of reduced atmospheric pressure along with its experimental verification under various cooling conditions, thus obtaining high compliance for computation and measurement results. The formulated model is dedicated to circuit-level simulations, and it enables computations of the junction temperature of the semiconductor device in a short time. It is also shown that lowering atmospheric pressure can double the value of the junction-ambient thermal resistance.

Keywords: thermal model; thermal impedance; power semiconductor devices; stratosphere; airship (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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