High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

Radin Za’im, Jafferi Jamaludin, Yushaizad Yusof and Nasrudin Abd Rahim
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Radin Za’im: Department of Electrical Electronics and System, Faculty of Engineering and Built Environment, National University of Malaysia, Bangi 43600, Malaysia
Jafferi Jamaludin: UM Power Energy Dedicated Advanced Centre, University of Malaya, Kuala Lumpur 59990, Malaysia
Yushaizad Yusof: Department of Electrical Electronics and System, Faculty of Engineering and Built Environment, National University of Malaysia, Bangi 43600, Malaysia
Nasrudin Abd Rahim: UM Power Energy Dedicated Advanced Centre, University of Malaya, Kuala Lumpur 59990, Malaysia

Energies, 2022, vol. 15, issue 14, 1-34

Abstract: This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

Keywords: high gain converter; high step-up; flyback; gallium nitride; GaN; silicon carbide; SiC; rectifier; voltage stress; leakage (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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