An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori and José R. Pinheiro
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Edemar O. Prado: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil
Pedro C. Bolsi: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil
Hamiltom C. Sartori: Power Electronics and Control Research Group, GEPOC, Federal University of Santa Maria, Santa Maria 97105-900, RS, Brazil
José R. Pinheiro: Energy Efficiency Lab, LABEFEA, Federal University of Bahia, Salvador 40170-110, BA, Brazil

Energies, 2022, vol. 15, issue 14, 1-17

Abstract: This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A–40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.

Keywords: comparative analysis; GaN; power MOSFET; power electronics; SiC (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (6)

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