Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi and Lorenzo Codecasa
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Vincenzo d’Alessandro: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Antonio Pio Catalano: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Ciro Scognamillo: Department of Electrical Engineering and Information Technology, University Federico II, 80125 Naples, Italy
Markus Müller: Chair for Electron Devices and Integrated Circuits, Technical University Dresden, 01069 Dresden, Germany
Michael Schröter: Chair for Electron Devices and Integrated Circuits, Technical University Dresden, 01069 Dresden, Germany
Peter J. Zampardi: Qorvo, Inc., Newbury Park, CA 91320, USA
Lorenzo Codecasa: Department of Electronics, Information, and Bioengineering, Politecnico di Milano, 20133 Milan, Italy

Energies, 2022, vol. 15, issue 15, 1-27

Abstract: This paper presents a comprehensive overview of nonlinear thermal effects in bipolar transistors under static conditions. The influence of these effects on the thermal resistance is theoretically explained and analytically modeled using the single-semiconductor assumption. A detailed review of experimental techniques to extract the thermal resistance as a function of backside temperature and/or dissipated power from DC measurements is provided; advantages, underlying approximations, and limitations of all methods are clarified, and guidelines for their correct application are given. Accurate FEM thermal simulations of an InGaP/GaAs and a Si/SiGe HBT are performed to verify the accuracy of the single-semiconductor theory. The thermal resistance formulations employed in the most popular compact bipolar transistor models for circuit simulators are investigated, and it is found that they do not properly describe nonlinear thermal effects. Alternative implementations of the more accurate single-semiconductor theory are then proposed for the future versions of the compact models.

Keywords: compact transistor model; finite-element method (FEM); gallium arsenide (GaAs); heterojunction bipolar transistor (HBT); nonlinear thermal effects; silicon-germanium (SiGe); thermal resistance (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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