In-Situ LID and Regeneration of Al-BSF Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

Siqi Ding, Chen Yang, Shuai Yuan, Bin Ai, Cheng Qin, Zhengke Li, Yecheng Zhou, Xiaopu Sun, Jianghai Yang, Quan Liu and Xueqin Liang
Additional contact information
Siqi Ding: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Chen Yang: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Shuai Yuan: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Bin Ai: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Cheng Qin: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Zhengke Li: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Yecheng Zhou: School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Xiaopu Sun: CSG PVTECH Co., Ltd., Dongguan 523141, China
Jianghai Yang: CSG PVTECH Co., Ltd., Dongguan 523141, China
Quan Liu: CSG PVTECH Co., Ltd., Dongguan 523141, China
Xueqin Liang: Yichang CSG Polysilicon Co., Ltd., Yichang 443007, China

Energies, 2022, vol. 15, issue 15, 1-13

Abstract: In this paper, five groups of industrial aluminium back-surface-field (Al-BSF) solar cells were made from silicon wafers from different locations of a B-doped Czochralski silicon ingot. Then, we performed the first LID (45 °C, 1 sun, 12 h), regeneration (100 °C, 1 sun, 24 h), and second LID (45 °C, 1 sun, 12 h) treatments on the cells, and measured the in-situ changes of their I - V characteristic parameters by using an I - V tester during the experiment. The cells were also characterized by Suns- V oc measurement, full-area light beam induced current scanning, and external quantum efficiency measurement at the four breakpoints of treatments (before and after the first LID, after regeneration and the second LID). It was found that the LID and regeneration of the Al-BSF solar cells can be explained by the LID and regeneration reaction of B-O defects and the LID caused by dissociation of Fe-B pairs. After regeneration, the relative decay rate of efficiency decreased from 2.75–3.8% during the first LID to 0.42–1.23% during the second LID, indicating that regeneration treatment (100 °C, 1 sun, 24 h) can improve the anti-LID ability of Al-BSF solar cells.

Keywords: in-situ; light-induced degradation (LID); regeneration; Fe-B pairs; B-O defects; solar cells (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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