MoS 2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Jinbing Cheng (), Junbao He, Chunying Pu, Congbin Liu (), Xiaoyu Huang, Deyang Zhang, Hailong Yan and Paul K. Chu
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Jinbing Cheng: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Junbao He: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Chunying Pu: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Congbin Liu: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Xiaoyu Huang: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Deyang Zhang: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, China
Hailong Yan: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, China
Paul K. Chu: Department of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

Energies, 2022, vol. 15, issue 17, 1-8

Abstract: Molybdenum disulfide (MoS 2 ) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height ( Φ B ) and contact resistance are obstacles hampering the fabrication of high-power MoS 2 transistors. The electronic transport characteristics of MoS 2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS 2 channel and copper (Cu) metal–TiO 2 -MoS 2 channel. Contact optimization is conducted by adjusting the thickness of the TiO 2 interlayer between the metal and MoS 2 . The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO 2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.

Keywords: MoS 2; TiO 2; Schottky barrier; contact resistance (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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