Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot and Véronique Sousa
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Florian Rigaud-Minet: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Julien Buckley: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
William Vandendaele: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Matthew Charles: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Marie-Anne Jaud: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Elise Rémont: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Hervé Morel: Univ. Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France
Dominique Planson: Univ. Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France
Romain Gwoziecki: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Charlotte Gillot: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Véronique Sousa: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

Energies, 2022, vol. 15, issue 19, 1-13

Abstract: Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by adjusting TCAD parameters and binding them with experimental concentrations to fit experimental data, trap properties were obtained. The comparison of these properties with the acceptor traps in the literature suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.

Keywords: power electronics; wide bandgap; gallium nitride; capacitance; traps; TCAD (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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