Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Tongyao Han, Yifei Luo, Binli Liu (), Xiao Ma and Feng Xie
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Tongyao Han: National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan 430033, China
Yifei Luo: National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan 430033, China
Binli Liu: National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan 430033, China
Xiao Ma: National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan 430033, China
Feng Xie: National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of Engineering, Wuhan 430033, China

Energies, 2022, vol. 15, issue 19, 1-13

Abstract: Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal models often take the chip active area as a uniform heat source to obtain a victual junction temperature ( T vj ). In this paper, a discrete distributed heat source model combined with a thermal network model based on the sublayer division strategy is proposed to achieve an accurate temperature distribution description along the chip vertical path. Taking a 1700 V/3600 A IGBT module as an example, the proposed model can evaluate the short-duration transient temperature distribution along the chip vertical path and the error is less than 2 °C compared with the finite element model. Meanwhile, the model is applied to a single short-duration transient timescale and multi-timescale systems separately, and the simulation speed is increased by more than 80 times and 297 times, which verifies its validity and accuracy.

Keywords: IGBT; multi-timescale; distributed heat source; chip vertical path; temperature distribution (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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