Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

Yajing Zhang, Jianguo Li, Jiuhe Wang, Trillion Q. Zheng and Pengyu Jia ()
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Yajing Zhang: School of Automation, Beijing Information Science and Technology University, Beijing 100192, China
Jianguo Li: School of Automation, Beijing Information Science and Technology University, Beijing 100192, China
Jiuhe Wang: School of Automation, Beijing Information Science and Technology University, Beijing 100192, China
Trillion Q. Zheng: School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China
Pengyu Jia: School of Electrical Engineering, North China University of Technology, Beijing 100144, China

Energies, 2022, vol. 15, issue 20, 1-12

Abstract: With the increase in renewable energy generation, microgrid has put forward higher requirements on the power density and performance of the photovoltaic inverter. In this paper, the dynamic process of inverter based on the cascode Gallium nitride (GaN) high electron mobility transistor (HEMT) for the photovoltaic (PV) application is analyzed in detail. The parasitic inductors and capacitors have been considered in our proposed equivalent model, which can explain the phenomenon that the crossover time of the voltage and current is prolonged by the parasitic parameters. The influence of the parasitic parameters is identified through theoretical analysis. By analyzing the influence of parasitic parameters, the design process of high-frequency inverter can be optimized. A 500 W inverter based on the cascode GaN HEMT is built, and the correctness of theoretical and simulation analysis is verified by the experimental results.

Keywords: PV; GaN HEMT; cascode; inverter; microgrid (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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