Wide Band Gap Devices and Their Application in Power Electronics

Amit Kumar, Milad Moradpour, Michele Losito, Wulf-Toke Franke, Suganthi Ramasamy, Roberto Baccoli and Gianluca Gatto
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Amit Kumar: Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy
Milad Moradpour: Centre for Industrial Electronics, University of Southern Denmark, 6400 Sønderborg, Denmark
Michele Losito: Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy
Wulf-Toke Franke: Centre for Industrial Electronics, University of Southern Denmark, 6400 Sønderborg, Denmark
Suganthi Ramasamy: Department of Electrical Engineering, Government College of Technology, Coimbatore 641013, Tamil Nadu, India
Roberto Baccoli: Department of Environmental Civil Engineering and Architecture, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy
Gianluca Gatto: Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo 2, 09123 Cagliari, Italy

Energies, 2022, vol. 15, issue 23, 1-26

Abstract: Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

Keywords: wide bandgap; silicon carbide; gallium nitride; power electronics; energy storage (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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