An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters

Dong Yan, Lijun Hang, Yuanbin He, Zhen He and Pingliang Zeng
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Dong Yan: College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China
Lijun Hang: College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China
Yuanbin He: College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China
Zhen He: College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China
Pingliang Zeng: College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China

Energies, 2022, vol. 15, issue 8, 1-18

Abstract: The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization. Compared with the traditional Si transistors, GaN HEMT has faster switching speed and lower on-off loss. As a result, it is more sensitive to the nonlinear parameters due to the fast switching speed. The subsequent voltage and current overshooting will affect the efficiency and safety of the GaN HEMT and power electronic systems. In this paper, an accurate switching transient analytical model for GaN HEMT is proposed, which considers the effects of parasitic inductances, nonlinear junction capacitances and nonlinear transconductance. The model characteristic of turn-ON process and turn-OFF process is illustrated in detail, and the equivalent circuits are derived for each switching transition. The accuracy of the proposed model can be verified by comparing the predicted switching waveform and switching loss with that of the experimental results based on the double pulse test (DPT) circuit. Compared with the conventional model, the proposed model is more accurate and matches better with the experimental results than the conventional model. Finally, this model can be used for analyzing the influences of gate resistance, nonlinear junction capacitances, and parasitic inductances on switching transient waveform and refining calculation switching loss.

Keywords: GaN HEMT; switching transient analytical model; parasitic inductance; nonlinear junction capacitance; nonlinear transconductance; double pulse test (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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