Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE

Beata Ściana, Wojciech Dawidowski, Damian Radziewicz, Joanna Jadczak, Mari Cruz López-Escalante, Victor González de la Cruz and Mercedes Gabás
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Beata Ściana: Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Wojciech Dawidowski: Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Damian Radziewicz: Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Joanna Jadczak: Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Mari Cruz López-Escalante: The Nanotech Unit, Departamento de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga, Spain
Victor González de la Cruz: The Nanotech Unit, Departamento de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga, Spain
Mercedes Gabás: Instituto de Energía Solar, ETSIT—Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain

Energies, 2022, vol. 15, issue 9, 1-11

Abstract: This work presents an investigation of the fully strained GaAsN/GaAs heterostructures obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the analysis of the strain generated in the GaAsN epilayers and its correlation with the formation of split interstitial complexes (N-As) As . We analyzed strained GaAsN epilayers with nitrogen contents and thicknesses varying from 0.93 to 1.81% and 65 to 130 nm, respectively. The composition and thickness were determined by high resolution X-ray diffraction, and the strain was determined by Raman spectroscopy, while the N-bonding configurations were determined by X-ray photoelectron spectroscopy. We found that the strain generated in the GaAsN epilayers is mainly caused by a lattice mismatch with the GaAs substrate. This macroscopic strain is independent of the amount of (N-As) As interstitial defects, while the local strain, induced by an alloying effect, tends to decrease with an increasing ratio of (N-As) As interstitial defects to substitutional nitrogen atoms incorporated into an arsenic sublattice—N As . Here, we show experimentally, for the first time, a correlation between the strain in the GaAsN epilayers, caused by an alloying effect determined by Raman spectroscopy, and the (N-As) As /N As ratio estimated by the XPS method. We found out that the (N-As) As interstitials compensate the local strain resulting from the presence of N in the GaAs matrix, if their amount does not exceed ~65% of the substitutional introduced nitrogen N As .

Keywords: III-V semiconductors; dilute nitrides; AP-MOVPE; nitrogen interstitial complexes; HRXRD; XPS; Raman spectroscopy (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
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