Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

Enrico Bottaro, Santi Agatino Rizzo and Nunzio Salerno
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Enrico Bottaro: Department of Electrical Electronic and Computer Engineering, University of Catania, 95125 Catania, Italy
Santi Agatino Rizzo: Department of Electrical Electronic and Computer Engineering, University of Catania, 95125 Catania, Italy
Nunzio Salerno: Department of Electrical Electronic and Computer Engineering, University of Catania, 95125 Catania, Italy

Energies, 2022, vol. 15, issue 9, 1-32

Abstract: Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account for the limits of the current technology. Circuit models of power MOSFETs have been deeply investigated by academia and industry for a long time. These models are able to emulate the datasheet information, and they are usually provided by device manufacturers as netlists that can be simulated in any kind of SPICE-like software. This paper firstly highlights the similarities and differences between MOSFETs and GaN HEMTs at the datasheet level. According to this analysis, the features of MOSFET circuit models that can be adopted for GaN HEMT modelling are discussed. This task has been accomplished by overviewing the literature on MOSFETs circuit models as well as analysing manufacturers netlists, thus highlighting the models MOSFETs valid or adaptable to GaN HEMTs. The study has revealed show that some models can be adapted for the GaN HEMT devices to emulate static characteristics at room temperature while the MOSFET models of dynamic characteristics can be used for GaN HEMT devices. This study enables the devices modellers to speed up the GaN HEMT modelling thanks to the use of some well-established MOSFET models. In this perspective, some suggestions to develop accurate GaN HEMT models are also provided.

Keywords: silicon MOSFET; silicon carbide (SiC); SiC MOSFET; gallium nitride (GaN); GaN HEMT; wide-bandgap semiconductor; circuit model; behavioural model; power electronics; SPICE (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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