A Bridge-Level Junction Temperature Estimation Method for SiC MOSFETs Combining Transient Voltage and Current Peaks

Shuo Wu, Pengju Sun (), Xu Huang and Kaiwei Li
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Shuo Wu: State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
Pengju Sun: State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
Xu Huang: State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
Kaiwei Li: State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China

Energies, 2023, vol. 16, issue 10, 1-12

Abstract: Accurate measurement of the junction temperature T j is crucial for ensuring safe operation and evaluating the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). In this paper, the junction temperature of a half-bridge is monitored by combining transient voltage and current peaks across the lower device. Both theoretical analysis and switch tests validate that the peak induced voltage and peak reversed current during the commutation transient exhibit a linear relationship with the temperature of the corresponding devices. The impact of load current and bus voltage on the measurement results is also investigated. Moreover, the effectiveness of the proposed method is confirmed by carrying out tests at different temperatures, and the feasibility of online implementation is discussed. The experimental results show that the proposed method has high linearity and sensitivity and can simultaneously provide temperature information for both devices of a half-bridge.

Keywords: junction temperature; SiC MOSFET; temperature-sensitive electrical parameter (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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