Effects of Growth Temperature on the Morphological, Structural, and Electrical Properties of CIGS Thin Film for Use in Solar Cell Applications

Hoang Lam Nguyen, Hyosang Lee, Shoyebmohamad F. Shaikh, Hassnain Abbas Khan, Mohaseen S. Tamboli, Jae Hak Jung and Nguyen Tam Nguyen Truong ()
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Hoang Lam Nguyen: Tra Vinh University, Tra Vinh 940000, Vietnam
Hyosang Lee: School of Chemical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan 38541, Republic of Korea
Shoyebmohamad F. Shaikh: Department of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia
Hassnain Abbas Khan: Clean Energy Research Centre, Korea Institute of Science and Technology, P.O. Box 131, Seoul 02792, Republic of Korea
Mohaseen S. Tamboli: Korea Institute of Energy Technology (KENTECH), 21 KENTECH-gil, Naju 58330, Republic of Korea
Jae Hak Jung: School of Chemical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan 38541, Republic of Korea
Nguyen Tam Nguyen Truong: School of Chemical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan 38541, Republic of Korea

Energies, 2023, vol. 16, issue 11, 1-9

Abstract: Cu-In-Ga-Se nanoparticles (NPs) were synthesized using a colloidal route process. The effects of growth temperature (GT) on the properties of CuInGaSe2 (CIGS) thin films made from these nanoparticles were investigated using TEM, PL, XRD, and SEM techniques. The Cu-In-Ga-Se NPs were synthesized at growth temperatures ranging from 90 °C to 105 °C and then annealed at 550 °C for 7 min under a Se ambient. The resulting CIGS thin film, formed from Cu-In-Ga-Se NPs synthesized at a GT of 90 °C (referred to as GT90-CIGS), showed a tetragonal structure, large grain size, and high sunlight absorption. It had a band gap energy (Eg) of approximately 0.94 eV. Non-vacuum GT90-CIGS-based solar cells were investigated and fabricated using varying thicknesses of a CdS buffer layer. The maximum power conversion efficiency achieved was approximately 8.3% with an optimized device structure of Al/ITO/ZnO/CdS/CIGS/Mo.

Keywords: copper indium gallium selenide (CIGS); absorption layer; colloidal route; none-vacuum process (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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