Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Vishwajeet Maurya (), Julien Buckley, Daniel Alquier, Mohamed-Reda Irekti, Helge Haas, Matthew Charles, Marie-Anne Jaud and Veronique Sousa
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Vishwajeet Maurya: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
Julien Buckley: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
Daniel Alquier: GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France
Mohamed-Reda Irekti: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
Helge Haas: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
Matthew Charles: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
Marie-Anne Jaud: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France
Veronique Sousa: CEA, Leti, University Grenoble Alpes, 38000 Grenoble, France

Energies, 2023, vol. 16, issue 14, 1-10

Abstract: We investigated the temperature-dependent reverse characteristics ( J R -V R -T ) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured J R -V R -T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

Keywords: gallium nitride; vertical Schottky-diode; reverse leakage; TCAD modeling (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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