Impact of Bypass Diode Fault Resistance Values on Burnout in Bypass Diode Failures in Simulated Photovoltaic Modules with Various Output Parameters

Toshiyuki Hamada (), Tomoki Azuma, Ikuo Nanno, Norio Ishikura, Masayuki Fujii and Shinichiro Oke
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Toshiyuki Hamada: Faculty of Engineering, Osaka Electro-Communication University, 18-8 Hatsucho, Osaka 575-0063, Japan
Tomoki Azuma: Graduate School of Engineering, Osaka Electro-Communication University, 18-8 Hatsucho, Osaka 575-0063, Japan
Ikuo Nanno: National Institute of Technology, Ube College, 2-14-1 Tokiwadai, Yamaguchi 755-009, Japan
Norio Ishikura: National Institute of Technology, Yonago College, 4448 Hikonacho, Tottori 683-0854, Japan
Masayuki Fujii: National Institute of Technology, Oshima College, 1091-1 Komatsu, Yamaguchi 742-2106, Japan
Shinichiro Oke: National Institute of Technology, Tsuyama College, 624-1, Numa, Okayama 708-0824, Japan

Energies, 2023, vol. 16, issue 16, 1-9

Abstract: The bypass diode (BPD), a protective element in a photovoltaic system (PVS), occasionally fails as a result of lightning damage. In this study, using various resistance values, we investigated the burnout risk of PV modules experiencing BPD failures through experiments that replicated conditions in which a BPD fails. Specifically, we evaluated the electric power generated by the failed BPD as we varied the faulty resistance value. Furthermore, we examined the impact of the failure resistance value of the BPD on PV module burnout. The results indicated that the power consumption of a BPD is particularly high, ranging from approximately 2 to 10 Ω when the PV module operates at its maximum power point. In addition, when the load is disconnected, the risk of heat generation is significantly higher, at BPD fault resistance values of approximately 0.1–10 Ω. Moreover, a faulty BPD with a resistance of approximately 0.1–10 Ω poses a high risk of burnout, particularly during load disconnection, owing to the increased heat generated by a BPD failure.

Keywords: photovoltaic solar system (PVS); bypass diode (BPD); failure resistance (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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