The Impact of the Micro-Structure within Passivated Layers on the Performance of the a-Si:H/c-Si Heterojunction Solar Cells

Sunhwa Lee, Jinjoo Park, Duy Phong Pham, Sangho Kim, Youngkuk Kim, Thanh Thuy Trinh (), Vinh Ai Dao () and Junsin Yi ()
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Sunhwa Lee: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Jinjoo Park: Major of Energy and Applied Chemistry, Division of Energy & Optical Technology Convergence, Cheongju University, Cheongju 28503, Chungcheongbuk-do, Republic of Korea
Duy Phong Pham: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Sangho Kim: Department of Energy Science, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Youngkuk Kim: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea
Thanh Thuy Trinh: Department of Physics, International University, Block 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City 720400, Vietnam
Vinh Ai Dao: Department of Physics, Faculty of Applied Sciences, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam
Junsin Yi: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ru, Suwon-si 16419, Gyeonggi-do, Republic of Korea

Energies, 2023, vol. 16, issue 18, 1-9

Abstract: This study investigated the correlation between the degree of disorder of the post-hydrogen plasma treatment (HPT) of the intrinsic hydrogenated amorphous silicon (a-Si:H(i)) and the device characteristics of the a-Si:H/c-Si heterojunction (HJ) solar cells. The reduction in the degree of disorder helps to improve interface defects and to enhance the effective carrier lifetime of the a-Si:H/c-Si heterojunction. The highest effective minority carrier lifetime of 2.08 ms was observed in the film with the lowest degree of disorder of 2.03. The devices constructed with HPT a-Si:H(i) having a lower degree of disorder demonstrated higher device performance in terms of open-circuit voltage ( V oc ), fill factor ( FF ), and subsequent conversion efficiency. An a-Si:H(i) with a lower degree of disorder (2.03) resulted in a higher V oc of 728 mV and FF of 72.33% and achieved a conversion efficiency of up to 20.84% for the a-Si:H/c-Si HJ silicon solar cell.

Keywords: passivation; a-Si:H(i) thin film; post-hydrogen plasma treatment; silicon heterojunction solar cell (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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