Effect of Interfacial Oxide Layers on Self-Doped PEDOT/Si Hybrid Solar Cells

Aditya Saha, Ryuji Oshima, Daisuke Ohori, Takahiko Sasaki, Hirokazu Yano, Hidenori Okuzaki, Takashi Tokumasu, Kazuhiko Endo and Seiji Samukawa ()
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Aditya Saha: Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
Ryuji Oshima: National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
Daisuke Ohori: Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
Takahiko Sasaki: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Hirokazu Yano: Organic Materials Research Laboratory, Tosoh Corporation, Shunan 746-8501, Japan
Hidenori Okuzaki: Graduate Faculty of Interdisciplinary Research, University of Yamanashi, Kofu 400-8510, Japan
Takashi Tokumasu: Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
Kazuhiko Endo: Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
Seiji Samukawa: Institute of Communications Engineering, National Yang Ming Chiao Tung University, Hshinchu 30093, Taiwan

Energies, 2023, vol. 16, issue 19, 1-14

Abstract: PEDOT:PSS/Si hybrid photovoltaic cells have been attracting attention as a potential way to simplify the manufacturing process and democratize solar energy production. Control of the PEDOT/Si interface is also one of the primary ways to ensure the improved performance and lifetimes of multijunction devices, such as perovskite/Si tandem solar cells. In this work, the effects of the interfacial silicon oxide layer were investigated by creating a novel and controllable neutral beam oxide interlayer with different thicknesses. A novel self-doped PEDOT (S-PEDOT) was used to improve interfacial contact and avoid the secondary doping of PEDOT:PSS. X-ray photoelectron spectroscopy (XPS) showed that the saturation of interfacial silicon atoms in SiO x -Si bonds as well as a very thin, (~1 nm) damage-free oxide interlayer were the keys to maintaining good passivation with a high tunneling current. Lifetime measurements also showed that the interlayers with the most SiO 2 content degraded the least. The degradation of the devices was due to the continued growth of the oxide layer through reactions with silicon sub-oxides and the degradation of S-PEDOT.

Keywords: hybrid solar cell; Si; organics; S-PEDOT; interfacial layer (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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