Influence of Al 2 O 3 /SiN x Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Weitao Fan, Honglie Shen (), Biao Liu, Lei Zhao, Xin Zhang and Hong Pan
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Weitao Fan: Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
Honglie Shen: Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
Biao Liu: Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
Lei Zhao: Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
Xin Zhang: Ycergy (Suzhou) Technology Co., Ltd., Suzhou 215121, China
Hong Pan: Ycergy (Suzhou) Technology Co., Ltd., Suzhou 215121, China

Energies, 2023, vol. 16, issue 19, 1-11

Abstract: In recent years, polycrystalline passivated emitter and rear cell (PERC) solar cells have developed rapidly, but less research has been conducted on the preparation process of their rear side passivation layers on standard solar cell production lines. In this work, a Al 2 O 3 /SiN x rear side stacked passivation layer for polycrystalline PERC solar cells was prepared using the plasma- enhanced chemical vapor deposition (PECVD) method. The effects of different Al 2 O 3 layer thicknesses (6.8~25.6 nm), SiN x layer thicknesses (65~150 nm) and SiN x refractive indices (2.0~2.2) on the passivation effect and electrical performance were systematically investigated, which were adjusted by TMA flow rate, conveyor belt speed and the flow ratio of SiH 4 and NH 3 , respectively. In addition, external quantum efficiency (EQE) and elevated temperature-induced degradation experiments were also carried out to check the cell performance. The results showed that the best passivation effect was achieved at 10.8 nm Al 2 O 3 layer, 120 nm SiN x layer and 2.2 SiN x layer refractive index. Under the optimal conditions mentioned above, the highest efficiency was 19.20%, corresponding V oc was 647 mV, I sc was 9.21 A and FF was 79.18%. Meanwhile, when the refraction index was 2.2, the EQE of the cell in the long-wavelength band (800–1000 nm) was improved. Moreover, the decrease in conversion efficiency after 45 h LeTID was around 0.55% under the different refraction indices. The above results can provide a reference for the industrial production of polycrystalline PERC solar cells.

Keywords: rear-side passivation; polycrystalline PERC solar cell; standard solar cell production line; minority carrier lifetime; electrical performance parameters (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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