The Modeling of GaN-FET Power Devices in SPICE

Janusz Zarębski () and Damian Bisewski
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Janusz Zarębski: Department of Marine Electronics, Gdynia Maritime University, Morska 81-87, 81-225 Gdynia, Poland
Damian Bisewski: Department of Marine Electronics, Gdynia Maritime University, Morska 81-87, 81-225 Gdynia, Poland

Energies, 2023, vol. 16, issue 22, 1-16

Abstract: This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014. GaN-FETs are built as a cascade connection of a normally on gallium nitride HEMT and a normally off MOSFET made of silicon. On the manufacturer’s sites, one can find models of these devices for like-SPICE tools in the text form. The main goal of this paper is to evaluate the model’s accuracy by comparing calculation results obtained by the use of the considered models with the authors’ measurement results and datasheet. It has been demonstrated that the GaN Systems model built on controlled sources described by a set of arbitrarily selected mathematical functions more accurately reproduces the basic characteristics of a transistor. On the other hand, the models from Transphorm and Nexperia, which are constructed based on built-in semiconductor device models, more precisely calculate the values of selected functional transistor parameters.

Keywords: GaN-FET; modeling; SPICE (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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