Boosting Photovoltaic Efficiency in Double Quantum Well Intermediate Band-Solar Cells through Impurity Positioning

Angel E. Obispo (), Cristofher Zuñiga Vargas and William C. Algoner
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Angel E. Obispo: Facultad de Ingeniería Eléctrica y de Potencia, Universidad Tecnológica del Perú, Lima 15306, Peru
Cristofher Zuñiga Vargas: Facultad de Ingeniería Eléctrica y de Potencia, Universidad Tecnológica del Perú, Lima 15306, Peru
William C. Algoner: Facultad de Ingeniería Eléctrica y de Potencia, Universidad Tecnológica del Perú, Lima 15306, Peru

Energies, 2023, vol. 16, issue 23, 1-14

Abstract: The photovoltaic conversion efficiency of a single-intermediate band solar cell that incorporates a double quantum well structure consisting of GaAs/InAs/GaAs/InAs/GaAs embedded in the intrinsic region of conventional p-i-n structure is analyzed. The width of the intermediate band and the solutions for the two lowest energy states has been determined by solving the two-impurities-related Schrodinger equation based on the Numerov method. The position of these impurities determines three distinct cases: the system in the absence of impurities (Case 1), impurities at the center of GaAs quantum barriers (Case 2), and impurities at the center of InAs quantum wells (Case 3). The photovoltaic conversion efficiency has been calculated as a function of the widths L y H of the quantum well structures. The obtained results indicate an improvement in efficiency under the specific conditions of these parameters.

Keywords: solar cell; intermediate band; quantum well; impurities; Schrödinger equation; conversion efficiency (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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