Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

Florian Rigaud-Minet (), Christophe Raynaud (), Julien Buckley, Matthew Charles, Patricia Pimenta-Barros, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa, Hervé Morel and Dominique Planson
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Florian Rigaud-Minet: Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France
Christophe Raynaud: Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France
Julien Buckley: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Matthew Charles: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Patricia Pimenta-Barros: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Romain Gwoziecki: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Charlotte Gillot: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Véronique Sousa: Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
Hervé Morel: Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France
Dominique Planson: Univ Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5005, F-69621 Villeurbanne, France

Energies, 2023, vol. 16, issue 2, 1-12

Abstract: Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level E T ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 ( E T = 0.47–0.48 eV; ? ? 10 ?15 cm 2 ) and D7 ( E T = 0.57 eV; ? = 4.45 × 10 ?12 cm 2 ). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as C N -C Ga . Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: N Ga .

Keywords: power electronics; wide bandgap; gallium nitride; DLTS; reactive ion etching; traps (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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