The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

Krzysztof Bernacki and Zbigniew Rymarski ()
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Krzysztof Bernacki: Department of Electronics, Electrical Engineering and Microelectronics, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland
Zbigniew Rymarski: Department of Electronics, Electrical Engineering and Microelectronics, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland

Energies, 2023, vol. 16, issue 2, 1-12

Abstract: The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

Keywords: voltage source inverter; wide-band-gap transistors; near-field interferences; power spectral density; radiation noise (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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