GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer

Yeonhwa Kim, May Angelu Madarang, Eunkyo Ju, Tsimafei Laryn, Rafael Jumar Chu, Tae Soo Kim, Dae-Hwan Ahn, Taehee Kim, In-Hwan Lee, Won Jun Choi and Daehwan Jung ()
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Yeonhwa Kim: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
May Angelu Madarang: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Eunkyo Ju: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Tsimafei Laryn: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Rafael Jumar Chu: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Tae Soo Kim: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Dae-Hwan Ahn: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Taehee Kim: Advanced Photovoltaics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
In-Hwan Lee: Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
Won Jun Choi: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Daehwan Jung: Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

Energies, 2023, vol. 16, issue 3, 1-9

Abstract: Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells. Several micron-thick III–V compositionally graded buffers are typically grown to reduce the high threading dislocation density that arises due to the lattice mismatch between III–V and Si. Here, we show that optically transparent n-In 0.1 Al 0.9 As/n-GaAs strained layer superlattice dislocation filter layers can be used to reduce the threading dislocation density in the GaAs buffer on Si while maintaining the GaAs buffer thickness below 2 μm. Electron channeling contrast imaging measurements on the 2 μm n-GaAs/Si template revealed a threading dislocation density of 6 × 10 7 cm −2 owing to the effective n-In 0.1 Al 0.9 As/n-GaAs superlattice filter layers. Our GaAs/Si tandem cell showed an open-circuit voltage of 1.28 V, Si bottom cell limited short-circuit current of 7.2 mA/cm 2 , and an efficiency of 7.5%. This result paves the way toward monolithically integrated triple-junction solar cells on Si substrates.

Keywords: solar cell; Si tandem cell; monolithic integration; molecular beam epitaxy (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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