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Integration of SiC Devices and High-Frequency Transformer for High-Power Renewable Energy Applications

Weichong Yao, Junwei Lu (), Foad Taghizadeh, Feifei Bai and Andrew Seagar
Additional contact information
Weichong Yao: School of Engineering and Built Environment, Griffith University, Brisbane, QLD 4111, Australia
Junwei Lu: School of Engineering and Built Environment, Griffith University, Brisbane, QLD 4111, Australia
Foad Taghizadeh: School of Engineering, Macquarie University, Sydney, NSW 2109, Australia
Feifei Bai: School of Engineering and Built Environment, Griffith University, Brisbane, QLD 4111, Australia
Andrew Seagar: School of Engineering and Built Environment, Griffith University, Brisbane, QLD 4111, Australia

Energies, 2023, vol. 16, issue 3, 1-27

Abstract: This paper presents a novel structure of Integrated SiC MOSFETs with a high-frequency transformer (I-SiC-HFT) for various high-power isolated DC–DC converters. Several resonant converters are considered for integration in this paper, including the phase-shift full-bridge (PSFB) converter, inductor–inductor–capacitor (LLC) resonant converter, bidirectional PSFB converter, and capacitor–inductor–inductor–capacitor (CLLC) resonant converter. The applications of I-SiC-HFT are focused on V2G EV battery charging systems, energy storage in DC and AC microgrids, and renewable energy systems. SiC devices, including MOSFETs, Schottky diodes, and MOSFET modules, are used in this novel structure of I-SiC-HFT. The high-frequency magnetic structure uses distributed ferrite cores to form a large central space to accommodate SiC devices. The optimized architecture of I-SiC-HFT and heatsink structure is proposed for thermal management of SiC devices. To prove the concept, a small-scale 1.5 kW prototype I-SiC-HFT is used to demonstrate the basic structure and various performance indicators through the FEM based electromagnetic simulation and DC–DC converter experiments.

Keywords: high-frequency magnetics; high-power high-frequency transformers; full-bridge isolated DC–DC converters; SiC MOSFET (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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