Photosensitivity of Nanostructured Schottky Barriers Based on GaP for Solar Energy Applications

Vasily Rud (), Doulbay Melebaev, Viktor Krasnoshchekov, Ilya Ilyin, Eugeny Terukov, Maksim Diuldin, Alexey Andreev, Maral Shamuhammedowa and Vadim Davydov
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Vasily Rud: Ioffe Institute, 195251 St. Petersburg, Russia
Doulbay Melebaev: Department of Physics, Turkmen State University Named for Magtymguly, Ashgabat 744000, Turkmenistan
Viktor Krasnoshchekov: Higher School of International Educational Program, Peter the Great Saint-Petersburg Polytechnic University, 195251 St. Petersburg, Russia
Ilya Ilyin: Faculty of Global Studies, M.V. Lomonosov Moscow State University, 119992 Moscow, Russia
Eugeny Terukov: Ioffe Institute, 195251 St. Petersburg, Russia
Maksim Diuldin: Higher School of International Educational Program, Peter the Great Saint-Petersburg Polytechnic University, 195251 St. Petersburg, Russia
Alexey Andreev: Faculty of Global Studies, M.V. Lomonosov Moscow State University, 119992 Moscow, Russia
Maral Shamuhammedowa: Department of Physics, Turkmen State University Named for Magtymguly, Ashgabat 744000, Turkmenistan
Vadim Davydov: Higher School of International Educational Program, Peter the Great Saint-Petersburg Polytechnic University, 195251 St. Petersburg, Russia

Energies, 2023, vol. 16, issue 5, 1-15

Abstract: This work investigates the surface-barrier photoelectric properties of Au-palladium-n-GaP structures. Research into the visible spectrum region, under the action of both linearly polarized and natural radiation, provides us with new information about the height of the barrier, the interface m-s section, and the GaP band structure. SBs based on GaP (p- and n-type) are helpful for researchers in developing advantageous structures for creating various photovoltaic devices—photodetectors for fiber-optic control of energy systems or possible structures for solar energy. Despite many years of research, issues concerning the band structure of semiconductors based on the phenomenon of photoelectroactive absorption in such surface-barrier structures’ m-s remain urgent in the creation of new high-performance devices. Such structures may also be interesting for creating solar energy systems. They create a thin insulating dielectric layer (usually an oxide layer) in solar cells on SBs between the m and the semiconductor substrate. The advantage of solar cells based on m dielectric semiconductor structures is the strong electric field near the surface of the semiconductor that usually has a direction favoring the collection of carriers created by short-wavelength light. Diffusion of impurities usually results in crystal defects in the active region. There are no such defects in the studied elements. This is also the difference between solar cells on m dielectric structures and elements with diffusion in p-n junctions. We studied the PS of Au-Pd-n-GaP nanostructures to determine the height of the potential barrier qφ Bo and obtained accurate data on the zone structure of the n-GaP. The PS of nanostructured Au-Pd-n-GaP structures was studied in the visible region of the spectrum. Essential information about the semiconductor’s potential barrier parameters and band structure was obtained. The intermediate Pd nanolayer between Au and GaP has specific effects on the Au-Pd-n-GaP nanostructure, which are of considerable practical and scientific significance for future needs.

Keywords: Schottky barrier; nanostructure; surface-barrier structures; photocurrent spectrum; spectral dependences; PS (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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