Methods of Measurement of Die Temperature of Semiconductor Elements: A Review

Krzysztof Dziarski, Arkadiusz Hulewicz, Piotr Kuwałek () and Grzegorz Wiczyński
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Krzysztof Dziarski: Institute of Electric Power Engineering, Poznan University of Technology, Piotrowo Street 3A, 60-965 Poznan, Poland
Arkadiusz Hulewicz: Institute of Electrical Engineering and Electronics, Poznan University of Technology, Piotrowo Street 3A, 60-965 Poznan, Poland
Piotr Kuwałek: Institute of Electrical Engineering and Electronics, Poznan University of Technology, Piotrowo Street 3A, 60-965 Poznan, Poland
Grzegorz Wiczyński: Institute of Electrical Engineering and Electronics, Poznan University of Technology, Piotrowo Street 3A, 60-965 Poznan, Poland

Energies, 2023, vol. 16, issue 6, 1-25

Abstract: Monitoring the temperature of a semiconductor component allows for the prediction of potential failures, optimization of the selected cooling system, and extension of the useful life of the semiconductor component. There are many methods of measuring the crystal temperature of the semiconductor element referred to as a die. The resolution and accuracy of the measurements depend on the chosen method. This paper describes known methods for measuring and imaging the temperature distribution on the die surface of a semiconductor device. Relationships are also described that allow one to determine the die temperature on the basis of the case temperature. Current trends and directions of development for die temperature measurement methods are indicated.

Keywords: current gain; electrical resistance; finite element method; forward voltage; Fourier law; junction–case resistance; liquid crystal; semiconductor; semiconductor die; threshold voltage; thermoreflectance (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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