The Mechanism of Hot Spots Caused by Avalanche Breakdown in Gallium-Doped PERC Solar Cells

Huayun Ge, Xing Li, Chunlin Guo, Wei Luo and Rui Jia ()
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Huayun Ge: Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
Xing Li: Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
Chunlin Guo: Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
Wei Luo: Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
Rui Jia: Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

Energies, 2023, vol. 16, issue 6, 1-11

Abstract: Gallium-doped p-type passivated emitter and rear contact (PERC) solar cells, which eliminate light-induced degradation (LID) and reduce the impact of light- and elevated-temperature-induced degradation (LeTID), have completely replaced boron-doped p-type PERC cells. However, in previous experiments, we found hot spots in the center of gallium-doped PERC solar cells. In this study, it was found that gallium-doped PERC cells had uneven resistivity, which caused hot spots brought about by the avalanche breakdown of PN junctions. There were significant hot spots in the center of the tested cells, with an average resistivity of 0.4–0.5 ?cm and nonuniformity greater than 30%, or at an average resistivity of 0.5–0.6 ?cm with nonuniformity greater than 40%. In this paper we describe and study in detail hot spots triggered by the uneven resistivity of gallium-doped cells and analyze the causes and related influencing factors, thereby providing guidance and a reference for the improvement of the performance and reliability of gallium-doped PERC solar cells.

Keywords: Ga-doping; PERC solar cell; avalanche breakdown; hot spot (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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