Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar

Ismail Ataseven (), Ilker Sahin and Salih Baris Ozturk
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Ismail Ataseven: Aselsan Inc., Yenimahalle, 06200 Ankara, Türkiye
Ilker Sahin: Aselsan Inc., Yenimahalle, 06200 Ankara, Türkiye
Salih Baris Ozturk: Department of Electrical Engineering, Istanbul Technical University, Maslak, 34469 Istanbul, Türkiye

Energies, 2023, vol. 16, issue 6, 1-18

Abstract: Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency. As a result, Si MOSFETs are replaced with SiC MOSFETs in many industrial applications. However, there are still not as many SiC modules to customize for each application. To meet the high-power requirement for custom applications, paralleling discrete SiC MOSFETs is an essential solution. However, it comes with many technical challenges; inequality in current sharing, different switching losses, different transient characteristics, and so forth. In this paper, the detailed MATLAB ® /Simulink ® Simpscape model of the SiC MOSFET from the datasheet and the simulation of the half-bridge circuit are investigated. Furthermore, this paper proposes the implementation of the four-paralleled SiC MOSFET half-bridge circuit with an improved symmetric gate driver layout. Moreover, a unique laminated busbar connected directly to the printed circuit board (PCB) is proposed to increase current and thermal capacity and decrease parasitic effects. Finally, the experimental and simulation results are presented using a 650 V SiC MOSFET (CREE) double-pulse test (DPT) circuit. The voltage overshoot problems and applied solutions are also presented.

Keywords: double-pulse test (DPT) circuit; half-bridge; paralleled SiC MOSFETs; symmetric gate driver layout; laminated busbar; voltage overshoot (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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