Investigations on Bi Doped Cu 2 Se Prepared by Solid State Reaction Technique for Thermoelectric Applications

Chaithanya Purushottam Bhat, Anusha, Aninamol Ani, U. Deepika Shanubhogue, P. Poornesh (), Ashok Rao and Saikat Chattopadhyay
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Chaithanya Purushottam Bhat: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India
Anusha: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India
Aninamol Ani: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India
U. Deepika Shanubhogue: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India
P. Poornesh: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India
Ashok Rao: Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India
Saikat Chattopadhyay: Department of Physics, School of Basic Sciences, Manipal University Jaipur, Jaipur 303007, Rajasthan, India

Energies, 2023, vol. 16, issue 7, 1-15

Abstract: The influence of Bi doping on the structural and thermoelectric properties of Cu 2 Se is presented in this work. Cu 2−x Bi x Se (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu 2−x Bi x Se samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu 2−x Bi x Se sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu 2−x Bi x Se samples. At 700 K, the Cu 1.988 Bi 0.012 Se sample has the highest power factor of 1474 μWm −1 K −2 , showing great potential in developing high-performance Cu 2 Se based thermoelectric materials.

Keywords: Cu 2 Se; Bi doping; power factor; thermoelectric (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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