A Review of Nanocrystalline Film Thermoelectrics on Lead Chalcogenide Semiconductors: Progress and Application

Zinovi Dashevsky (), Sergii Mamykin (), Bohdan Dzundza, Mark Auslender and Roni Z. Shneck
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Zinovi Dashevsky: Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Sergii Mamykin: V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine
Bohdan Dzundza: Department of Computer Engineering and Electronics, Vasyl Stefanyk Precarpathian National University, 76018 Ivano-Frankivsk, Ukraine
Mark Auslender: School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Roni Z. Shneck: Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

Energies, 2023, vol. 16, issue 9, 1-19

Abstract: Submicron-structured films of thermoelectric materials, exhibiting an improved thermoelectric figure of merit, are reviewed, including methods of fabrication and characterization. The review emphasizes the beneficial role of the grain boundaries in polycrystalline films. The enhanced Seebeck coefficient of lead chalcogenide films is attributed to a potential relief that is built along the grain boundaries. It scatters charge carriers with low energy and does not affect carriers with higher energy. The model that accounts for the thermoelectric properties of the films is described and assessed experimentally. The application of a flexible thermoelectric device (module) based on the nanocrystalline film thermoelectric semiconductors as high sensitivity radiation detectors is suggested.

Keywords: thermoelectric materials; nanostructuring; figure of merit; film thermoelectric module (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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