Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Salvatore Musumeci () and Vincenzo Barba
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Salvatore Musumeci: Dipartimento Energia “Galileo Ferraris”, Politecnico di Torino, 10129 Torino, Italy
Vincenzo Barba: Dipartimento Energia “Galileo Ferraris”, Politecnico di Torino, 10129 Torino, Italy

Energies, 2023, vol. 16, issue 9, 1-18

Abstract: High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

Keywords: GaN FET; HEMT; enhancement mode; depletion mode; WBG; SiC MOSFET; super-junction MOSFET; cascode; LIDAR (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

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