Structure and Thermoelectric Characterization of p-Type SnTe Nanobulk Material Synthesized by Charge Compensation Chemical Reaction

Ryosuke Fujiwara, Yuta Ikeda, Takuto Kawaguchi, Yohei Takashima, Takaaki Tsuruoka and Kensuke Akamatsu ()
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Ryosuke Fujiwara: Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan
Yuta Ikeda: Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan
Takuto Kawaguchi: Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan
Yohei Takashima: Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan
Takaaki Tsuruoka: Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan
Kensuke Akamatsu: Department of Nanobiochemistry, Frontiers of Innovative Research in Science and Technology (FIRST), Konan University, 7-1-20 Minatojimaminamimachi, Chuo-ku, Kobe 650-0047, Japan

Energies, 2023, vol. 17, issue 1, 1-12

Abstract: SnTe is the most widely studied p-type thermoelectric (TE) alternative to PbTe. In this study, we prepared a nanostructured SnTe bulk material via spark plasma sintering from a precursor synthesized by a chemical precipitation process without using organic molecules. The sintered sample comprised tiny grains (100–300 nm) with high-density grain boundaries. Eventually, because the material would contain no impurities acting as scattering nodes of charge carriers, the material exhibited a relatively high electrical conductivity of 7.07 × 10 5 Sm −1 at 310 K. The material demonstrated low lattice thermal conductivity (0.87 Wm −1 K −1 at 764 K), which can be owing to the increasing phonon scattering at grain boundaries. The maximum ZT was 0.31 at 764 K in the measured temperature range. This study provides a method for the design of phase-pure and surfactant-free SnTe thermoelectric materials that exhibit low lattice thermal conductivity and high carrier mobility using a chemical synthetic approach.

Keywords: thermoelectric material; tin telluride; chemical precipitation; low lattice thermal conductivity (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2023
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