The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film

Piotr Firek (), Elżbieta Czerwosz, Halina Wronka, Sławomir Krawczyk, Mirosław Kozłowski, Mariusz Sochacki, Dorota Moszczyńska and Jan Szmidt
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Piotr Firek: Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-665 Warsaw, Poland
Elżbieta Czerwosz: Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-665 Warsaw, Poland
Halina Wronka: Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-665 Warsaw, Poland
Sławomir Krawczyk: Łukasiewicz Research Network, Tele and Radio Research Institute, 03-450 Warsaw, Poland
Mirosław Kozłowski: Łukasiewicz Research Network, Tele and Radio Research Institute, 03-450 Warsaw, Poland
Mariusz Sochacki: Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-665 Warsaw, Poland
Dorota Moszczyńska: Faculty of Material Science and Engineering, Warsaw University of Technology, 02-507 Warsaw, Poland
Jan Szmidt: Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-665 Warsaw, Poland

Energies, 2024, vol. 17, issue 13, 1-12

Abstract: The objective of this paper is to evaluate the effect of a nanostructured C-Pd film deposited in the gate area of a field-effect transistor (FET) with a carbon–palladium composite gate (C-Pd/FET) on the hydrogen-sensing properties of the transistor. The method of preparing a field-effect transistor (FET) with a C-Pd film deposited as a gate and the properties of such a transistor and the film itself are presented. The C-Pd film deposited by PVD method on the gate area serves as an active layer. The PVD process was carried out in a dynamic vacuum of 10 −5 mbar from two separated sources—one containing fullerenes (C 60 ) and the other containing palladium acetate. Scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS, EDX) and electrical property studies were used to the characterize C-Pd films and FET/C-Pd structures. SEM observations revealed the topography of C-Pd films and FET/C-Pd transistors. EDS/EDX microanalysis was applied to visualize the arrangement of elements on the studied surfaces. The changes in electrical properties (resistance and relative resistance) due to the presence of hydrogen were studied in a designed and computerized experimental set-up. The enhanced properties of the FET/C-Pd transistor are demonstrated in terms of hydrogen detection.

Keywords: FET; palladium; carbon; hydrogen; nanocomposite film; gas sensor (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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