Mechanical Characterization of Sintered Silver Materials for Power Device Packaging: A Review

Keisuke Wakamoto () and Takahiro Namazu
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Keisuke Wakamoto: Research and Development Center, ROHM Co., Ltd., Kyoto 615-8585, Japan
Takahiro Namazu: Faculty of Engineering, Uzumasa, Kyoto University of Advanced Science, Kyoto 615-8577, Japan

Energies, 2024, vol. 17, issue 16, 1-22

Abstract: This paper reviews sintered silver (s-Ag) die-attach materials for wide band gap (WBG) semiconductor packaging. WBG devices that die-attach with s-Ag have attracted a lot of attention owing to their low energy loss and high temperature operation capabilities. For their practical operation, a reliability design should be established based on the failure of physics of the s-Ag die layer. This paper first focuses on the material characteristics of the s-Ag and tensile mechanical properties. Then, the s-Ag die-attach reliability is assessed with high-temperature storage, power cycling, and thermal shock tests. Each fracture mode was discussed by considering both the fracture surface analysis results and its mechanical properties. Finally, the effective reliability design parameters of the s-Ag die layer are introduced.

Keywords: SiC; sintered silver; film mechanical property; die-attach reliability; failure mechanism; lifetime prediction (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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