Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices

Dominik Nehmer, Tim Ringelmann and Mark-M. Bakran ()
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Dominik Nehmer: Department of Mechatronics, Centre for Energy Technology, University of Bayreuth, 95447 Bayreuth, Germany
Tim Ringelmann: Department of Mechatronics, Centre for Energy Technology, University of Bayreuth, 95447 Bayreuth, Germany
Mark-M. Bakran: Department of Mechatronics, Centre for Energy Technology, University of Bayreuth, 95447 Bayreuth, Germany

Energies, 2024, vol. 17, issue 17, 1-17

Abstract: This paper will evaluate the surge current robustness of different devices in relation to the active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC MOSFETs with different voltage ratings, a SiC JFET, and three GaN HEMTs will be compared. For the GaN devices, a eMode, a dMode, and a cascode device are employed. With the exception of the Si diode, all devices exhibited a current saturation effect. This saturation will result in significant losses and, ultimately, a thermal defect. For all devices, a safe operating area (SOA) criterion is established. For the SiC and GaN devices, the saturation voltage can be employed to define the safe operating area (SOA) criterion. In this context, two on-state resistance models will be defined for these devices. One is solely temperature-dependent, while the other also considers current saturation. Consequently, the saturation voltage and the on-resistance model represent a straightforward methodology for evaluating the ASC robustness of the devices. For all devices, a recommendation for a loss model and SOA criterion will be provided. Finally, the surge current robustness of all devices is compared. The Si, SiC and GaN devices exhibit comparable high surge current robustness in the application, with the exception of the GaN eMode, which is susceptible to strong current saturation.

Keywords: surge current; active short circuit; wide-band gap; electrical vehicle; drive inverter; GaN HEMT; SiC MOSFET; SiC JFET; Si IGBT; Si diode (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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