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Effect of Interface Defects on the Electric–Thermal–Stress Coupling Field Distribution of Cable Accessory Insulation

Xu Lu, Ran Hu, Kongying Guo, Rui Lan, Jie Tian, Yanhui Wei and Guochang Li (lgc@qust.edu.cn)
Additional contact information
Xu Lu: Shenzhen Power Supply Bureau Co., Ltd., Shenzhen 518001, China
Ran Hu: Shenzhen Power Supply Bureau Co., Ltd., Shenzhen 518001, China
Kongying Guo: College of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
Rui Lan: College of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
Jie Tian: Shenzhen Power Supply Bureau Co., Ltd., Shenzhen 518001, China
Yanhui Wei: College of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao 266042, China
Guochang Li: College of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao 266042, China

Energies, 2024, vol. 17, issue 17, 1-15

Abstract: The combined insulation interface of a high-voltage cable and accessories is the weakest part of a cable system. In this paper, the parameters of the dielectric constant, thermal conductivity, and elastic modulus of cross-linked polyethylene (XLPE) and silicone rubber (SIR) are obtained experimentally. On this basis, the model of a specific type of 110 kV cable and prefabricated insulation joint is established. A simulation of the electric–thermal–stress coupling field in the presence of typical defects in the main insulation–inner semi-conductive (SEMI) shielding layer (XLPE/SEMI interface) and the main insulation–silicone rubber insulation layer (XLPE/SIR interface) is studied. The simulation results show that at the XLPE/SIR interface, the electric field distortion caused by bubble defects reached 20.17 kV/mm, and the temperature rose to 56.15 °C. The effect of air-gap defects on the interface is similar to that of bubble defects. In addition, the semi-conductive impurity defects induced an increase in temperature to 56.82 °C and an increase in stress to 0.32 MPa. At the XLPE/SEMI interface, the electric field distortion induced by bubble defects was 19.98 kV/mm, and the temperature rose to 61.72 °C. The electric field distortion caused by metallic and semi-conductive defects was 8.44 kV/mm and 8.64 kV/mm, respectively. This study serves as a reference for the fault analysis and the operation and maintenance of cable accessories.

Keywords: cables and accessories; compound insulation; interface defect; electrical–thermal–stress coupling (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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