Review on Short-Circuit Protection Methods for SiC MOSFETs

Gang Lyu, Hamid Ali (), Hongrui Tan, Lyuzhang Peng and Xiaofeng Ding ()
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Gang Lyu: School of Automation and Electrical Engineering, Beihang University, Beijing 100191, China
Hamid Ali: School of Automation and Electrical Engineering, Beihang University, Beijing 100191, China
Hongrui Tan: School of Automation and Electrical Engineering, Beihang University, Beijing 100191, China
Lyuzhang Peng: School of Automation and Electrical Engineering, Beihang University, Beijing 100191, China
Xiaofeng Ding: School of Automation and Electrical Engineering, Beihang University, Beijing 100191, China

Energies, 2024, vol. 17, issue 17, 1-22

Abstract: SiC MOSFETs have been a game-changer in the domain of power electronics, thanks to their exceptional electrical traits. They are endowed with a high breakdown voltage, reduced on-resistance, and superior thermal conductivity, which make them supremely suitable for high-power and resilient applications across aviation, automotive, and renewable energy sectors. Despite their intrinsic advantages, SiC MOSFETs also necessitate advanced safeguarding mechanisms to counteract the vulnerability to short-circuit conditions due to their lower short-circuit robustness. This review paper offers an in-depth analysis of the array of short-circuit protection (SCP) methods applied to SiC MOSFETs. This paper scrutinizes techniques such as desaturation detection, di/dt detection, gate charge characteristics monitoring, two-dimensional monitoring, Rogowski coil-based detection, and two-stage turn-off strategies. The paper meticulously explores the operational principles, merits, and limitations of each method, with an emphasis on their adaptability to various fault types, including hard switching faults and load-induced faults. This review acts as a thorough compendium, guiding the choice of pertinent SCP strategies, ensuring the secure and efficient functioning of SiC MOSFETs in demanding applications.

Keywords: silicon carbide (SiC) MOSFETs; short-circuit detection; short-circuit protection; desaturation method; d i /d t detection; gate charge characteristics; Rogowski coil (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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