Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications

Juan David Cañón-Bermúdez and Luis Fernando Mulcué-Nieto ()
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Juan David Cañón-Bermúdez: Departamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales 176007, Colombia
Luis Fernando Mulcué-Nieto: Departamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales 176007, Colombia

Energies, 2024, vol. 17, issue 21, 1-16

Abstract: This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost.

Keywords: InAlN solar cells; co-sputtering DC; room temperature; optical properties; morphological properties; low-cost synthesis; indium aluminum nitride (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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