Research on Junction Temperature Smooth Control of SiC MOSFET Based on Body Diode Conduction Loss Adjustment

Junke Wu (), Yunpeng Wei, Yuntao Wu, Zhou Wang, Xingyu Li and Xiangnan Wei
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Junke Wu: School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Yunpeng Wei: School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Yuntao Wu: School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Zhou Wang: School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Xingyu Li: School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Xiangnan Wei: School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China

Energies, 2024, vol. 17, issue 23, 1-18

Abstract: In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperature. Therefore, it is necessary to adopt junction temperature control to reduce or smooth the junction temperature fluctuation, so as to realize the junction temperature control and improve the reliability of the device. At present, the methods for the junction temperature control of power devices have certain limitations and there are few active thermal management methods proposed for SiC device characteristics. In this paper, a method for realizing the smooth control of the junction temperature of a SiC device based on the conduction loss adjustment of the body diode for the SiC device has been proposed, considering that the conduction loss of the body diode is greater than the conduction loss of the SiC MOSFET. The conduction time of SiC MOSFET body diode was adjusted. By adjusting the conduction loss of the SiC MOSFET device, the fluctuation range of the junction temperature of the SiC MOSFET device was controlled, the smooth control of the junction temperature of the SiC device was realized, and the thermal stress of the device was reduced.

Keywords: SiC MOSFET; power semiconductor; junction temperature smoothing control; electric vehicle motor drive inverter; body diode; conduction loss (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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